NPN-Silizium-Fototransistor Silicon NPN Phototransistor SFH 309 P SFH 309 PFA SFH 309 P SFH 309 PFA Wesentliche Merkmale Features * Speziell geeignet fur Anwendungen im Bereich von 380 nm bis 1180 nm (SFH 309 P) und bei 880 nm (SFH 309 PFA) * Hohe Linearitat * 3 mm plane Plastikbauform im LED-Gehause * Gruppiert lieferbar * Especially suitable for applications from 380 nm to 1180 nm (SFH 309 P) and of 880 nm (SFH 309 PFA) * High linearity * 3 mm LED plastic package * Available in groups Anwendungen Applications * Lichtschranken fur Gleich- und Wechsellichtbetrieb * Industrieelektronik * Messen/Steuern/Regeln" * Photointerrupters * Industrial electronics * For control and drive circuits Typ Type Bestellnummer Ordering Code SFH 309 P Q62702-P245 SFH 309 PFA Q62702-P246 2001-02-22 1 SFH 309 P, SFH 309 PFA Grenzwerte Maximum Ratings Bezeichnung Parameter Symbol Symbol Wert Value Einheit Unit Betriebs- und Lagertemperatur Operating and storage temperature range Top; Tstg - 40 ... + 100 C Lottemperatur bei Tauchlotung Lotstelle 2 mm vom Gehause, Lotzeit t 5 s Dip soldering temperature 2 mm distance from case bottom, soldering time t 5 s TS 260 C Lottemperatur bei Kolbenlotung Lotstelle 2 mm vom Gehause, Lotzeit t 3 s Iron soldering temperature 2 mm distance from case bottom, soldering time t 3 s TS 300 C Kollektor-Emitterspannung Collector-emitter voltage VCE 35 V Kollektorstrom Collector current IC 15 mA Kollektorspitzenstrom, < 10 s Collector surge current ICS 75 mA Verlustleistung, TA = 25 C Total power dissipation Ptot 165 mW Warmewiderstand Thermal resistance RthJA 450 K/W 2001-02-22 2 SFH 309 P, SFH 309 PFA Kennwerte (TA = 25 C, = 950 nm) Characteristics Bezeichnung Parameter Symbol Symbol Wert Value SFH 309 P SFH 309 PFA Einheit Unit Wellenlange der max. Fotoempfindlichkeit Wavelength of max. sensitivity S max 860 900 nm Spektraler Bereich der Fotoempfindlichkeit S = 10% von Smax Spectral range of sensitivity S = 10% of Smax 380 ... 1180 730 ... 1120 nm 0.038 0.038 mm2 Bestrahlungsempfindliche Flache ( 220 m) A Radiant sensitive area Abmessungen der Chipflache Dimensions of chip area LxB LxW 0.45 x 0.45 0.45 x 0.45 mm x mm Abstand Chipoberflache zu Gehauseoberflache Distance chip front to case surface H 0.4 ... 0.8 0.4 ... 0.8 mm Halbwinkel Half angle 75 75 Grad deg. Kapazitat, VCE = 0 V, f = 1 MHz, E = 0 Capacitance CCE 5.0 5.0 pF Dunkelstrom Dark current VCE = 25 V, E = 0 ICEO 1 ( 200) 1 ( 200) nA 2001-02-22 3 SFH 309 P, SFH 309 PFA Bezeichnung Parameter Symbol Symbol Wert Value Einheit Unit Fotostrom, = 950 nm Photocurrent Ee = 0.5 mW/cm2, VCE = 5 V SFH 309 P: Ev = 1000 Ix, Normlicht/standard light A, VCE = 5 V IPCE 63 A IPCE 420 A Anstiegszeit/Abfallzeit Rise and fall time IC = 1 mA, VCC = 5 V, RL = 1 k tr, tf 6 s Kollektor-Emitter-Sattigungsspannung Collector-emitter saturation voltage IC = 20 A, Ee = 0.5 mW/cm2 VCEsat 150 mV Directional Characteristics Srel = f () 2001-02-22 4 SFH 309 P, SFH 309 PFA Relative Spectral Sensitivity, SFH 309 P Srel = f () Relative Spectral Sensitivity, SFH 309 PFA Srel = f () Photocurrent IPCE = f (Ee), VCE = 5 V Total Power Dissipation Photocurrent Ptot = f (TA) IPCE = f (VCE), Ee = Parameter Dark Current ICEO = f (VCE), E = 0 OHF01121 100 S rel % 80 60 40 20 0 400 600 800 1000 nm 1200 OHF01529 10 0 mA 1 PCE mW cm 2 mW 0.5 2 cm 0.25 OHF01527 10 1 nA CEO 10 0 mW cm 2 10 -1 10 -1 mW 0.1 2 cm 10 -2 10 -2 Dark Current ICEO = f (TA), VCE = 25 V, E = 0 OHF01530 10 3 nA CEO 0 5 10 15 20 25 30 V 35 V CE Capacitance CCE = f (VCE), f = 1 MHz, E = 0 10 -3 5 10 15 20 25 30 V 35 V CE Photocurrent IPCE /IPCE25 = f (TA), VCE = 5 V OHF01528 5.0 0 PCE OHF01524 1.6 PCE 25 C CE pF 1.4 4.0 10 2 1.2 3.5 10 1 3.0 1.0 2.5 0.8 2.0 0.6 1.5 10 0 0.4 1.0 0.2 0.5 10 -1 -25 2001-02-22 0 25 50 75 C 100 TA 0 10 -2 10 -1 10 0 5 10 1 V 10 2 V CE 0 -25 0 25 50 75 C 100 TA SFH 309 P, SFH 309 PFA Mazeichnung Package Outlines 0.7 (0.028) 0.4 (0.016) 0.8 (0.031) 0.4 (0.016) 3.5 (0.138) 29 (1.142) 27 (1.063) 4.5 (0.177) 4.1 (0.161) Chip position o2.9 (0.114) 1.8 (0.071) 1.2 (0.047) 0.6 (0.024) 0.4 (0.016) o3.1 (0.122) 2.54 (0.100) spacing Emitter Area not flat 3.1 (0.122) 2.5 (0.098) 2.0 (0.079) 1.7 (0.067) 4.0 (0.157) 3.6 (0.142) GEOY6446 Mae werden wie folgt angegeben: mm (inch) / Dimensions are specified as follows: mm (inch). Published by OSRAM Opto Semiconductors GmbH & Co. OHG Wernerwerkstrasse 2, D-93049 Regensburg (c) All Rights Reserved. Attention please! The information describes the type of component and shall not be considered as assured characteristics. Terms of delivery and rights to change design reserved. Due to technical requirements components may contain dangerous substances. For information on the types in question please contact our Sales Organization. Packing Please use the recycling operators known to you. We can also help you - get in touch with your nearest sales office. By agreement we will take packing material back, if it is sorted. You must bear the costs of transport. For packing material that is returned to us unsorted or which we are not obliged to accept, we shall have to invoice you for any costs incurred. Components used in life-support devices or systems must be expressly authorized for such purpose! Critical components 1 , may only be used in life-support devices or systems 2 with the express written approval of OSRAM OS. 1 A critical component is a component usedin a life-support device or system whose failure can reasonably be expected to cause the failure of that life-support device or system, or to affect its safety or effectiveness of that device or system. 2 Life support devices or systems are intended (a) to be implanted in the human body, or (b) to support and/or maintain and sustain human life. If they fail, it is reasonable to assume that the health of the user may be endangered. 2001-02-22 6